1. 27 Jan 2021 Journal Article IEEE Nanotechnology Magazine

## 1.5-μm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics Devices

Abstract

Using quantum dot (QD) structures as active material for optoelectronics was already in focus before the development of quantum well (QW) lasers and before semiconductor lasers occupied an important place in the market. The big step in reducing laser threshold conditions by substituting bulk gain materials with QWs should find a logical continuation by further reducing

2. Sep 2020 Conference Paper 2020 IEEE Photonics Conference (IPC)

## High Resolution, Fast Measurement of an Arbitrary Optical Pulse using Dual Comb Spectroscopy

Abstract

A technique to characterize arbitrary optical pulses based on dual comb spectroscopy was developed. We benchmark the method by comparison with conventional characterization methods. The limitations due to fluctuations of phase noise and timing jitters are overcome by implementing computational non-uniform sampling of measured interferograms.

3. 19 Aug 2020 Journal Article Journal of Applied Physics

## Highly accurate tuning of current–voltage characteristic shift in a photo-sensitive three terminal metal–insulator–semiconductor device

Abstract

We present a planar three terminal device fabricated on a silicon-on-insulator substrate. The device is based on a two-layer dielectric stack comprising SiO2 tunneling and HfO2 layers. A so-called gate electrode is placed between two other contacts, of the source and drain, all deposited on the insulator stack. In the dark as well as under illumination, the current–voltage

4. 21 Jul 2020 Journal Article Physical Review Applied

## Fast High-Resolution Measurement of an Arbitrary Optical Pulse Using Dual-Comb Spectroscopy

Abstract

We present amplitude and phase characterization of short optical pulses using dual-comb spectroscopy, where one comb is a well-characterized stable-frequency comb and the second is the pulse source to be measured. We demonstrate that the technique is suitable for truly arbitrary repetition rates of the two combs. Moreover, the system is highly sensitive and is shown to

5. May 2020 Conference Paper Conference on Lasers and Electro Optics

## Co-Occurrence of Resonance and Non-Resonance Tunneling Injection Processes in Quantum Dot Gain Media

Abstract

Resonance and non-resonance tunneling processes in tunneling injection quantum dot gain media were demonstrated, to occur simultaneously. Our finding sheds light on the basic tunneling injection schemes and their proper utilization in quantum dot lasers.

6. 1 May 2020 Conference Paper Conference on Lasers and Electro Optics

## Dual Comb Spectroscopy for Characterization of Short Optical Pulses

Abstract

A technique to characterize arbitrary optical pulses based on dual comb spectroscopy was developed. Distortions due to timing and phase fluctuations were determined and a method to compensate for them was demonstrated.

7. 18 Mar 2020 Journal Article ACS Photonics

## Resonant and Nonresonant Tunneling Injection Processes in Quantum Dot Optical Gain Media

Abstract

Resonant and nonresonant tunneling injection of charge carriers in a quantum dot optical gain medium in the form of an optical amplifier operating in the telecom wavelength range were identified using multiwavelength pump–probe measurements. Since the inhomogeneously broadened ensemble of quantum dots exhibits a very wide spectrum of transition energies, these two

8. 27 Dec 2019 Journal Article Applied Physics Reviews

## Coherent light matter interactions in nanostructure based active semiconductor waveguides operating at room temperature

Abstract

Light matter coherent interactions require that the coherent state induced in the matter be maintained for the duration of the observation. The only way to induce and observe such interactions in room temperature semiconductors, where the coherence time is of the order of a few hundred femtoseconds, is to use ultrashort pulse excitations and an ultrafast characterization

9. 16 Aug 2019 Journal Article Optica

## Large linewidth reduction in semiconductor lasers based on atom-like gain material

Abstract

With a new generation of quantum dot (QD) optical gain material comprising atom-like features, the fundamental spectral characteristics of laser emission have been improved significantly. We describe the spectral and power characteristics of continuous wave (CW) single-mode InAs/AlGaInAs/InP QD distributed feedback lasers operating at 1.5 μm. Linewidths as narrow as 60

## Sub-50 kHz Linewidth $1.55\ \mu \mathrm{m}$ Quantum Dot Distributed Feedback Lasers
Further optimized high-quality InP-based quantum dot materials with low inhomogeneous linewidth broadening were used to realize $1.55\ \mu \mathrm{m}$ quantum dot distributed feedback lasers, which clearly show fundamental advantages in comparison to quantum well based devices in terms of new record values in emission linewidth $( , high output powers ($> 17\$ dBm