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17 Nov 2022 • Journal Article • Advanced Materials
Zn-doped P-type InAs Nanocrystal Quantum Dots
AbstractDoped heavy metal-free III – V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p-n homojunction devices. InAs nanocrystals, that are of particular relevance for short wave IR detection and emission
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20 Sep 2022 • Journal Article • Chemical Physics Reviews
Charge dissociation in organic solar cells—from Onsager and Frenkel to modern models
AbstractOrganic-based solar cells have developed for the last three decades. Moving forward generally requires the assistance of useful models that are adapted to currently used materials and device architectures. The least understood part of the charge generation is the first step of the exciton dissociation, and new or refined models are being suggested. However, many of
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7 Sep 2022 • Journal Article • ACS Energy Letters
Persistent Ion Accumulation at Interfaces Improves the Performance of Perovskite Solar Cells
AbstractThe mixed ionic–electronic nature of lead halide perovskites makes their performance in solar cells complex in nature. Ion migration is often associated with negative impacts─such as hysteresis or device degradation─leading to significant efforts to suppress ionic movement in perovskite solar cells. In this work, we demonstrate that ion trapping at the perovskite/electron
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6 Jul 2022 • Journal Article • ACS Applied Materials & Interfaces
Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)
AbstractSchottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities
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21 Jun 2022 • Journal Article • Applied Physics Letters
Double injection function InGaZnO transistor—computational analysis of the patterned doping method
AbstractMetal oxide-based electronics is advancing rapidly where the reduced dimensions require transistor structures different to conventional CPUs. The double injection function transistor (DIFT) is a type of a source-controlled transistor. As doping is a facile method in the semiconductor industry, we suggest that the DIFT can be realized through a doping pattern under the
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2 Jun 2022 • Journal Article • Advanced Materials
14 GHz Schottky Diodes Using a p-Doped Organic Polymer
AbstractThe low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography
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Jun 2022 • Journal Article • Solar RRL
Illumination-Driven Energy Level Realignment at Buried Interfaces between Organic Charge Transport Layers and a Lead Halide Perovskite
AbstractTremendous progress in employing metal halide perovskites (MHPs) in a variety of applications, especially in photovoltaics, has been made in the past decade. To unlock the full potential of MHP materials in optoelectronic devices, an improved understanding of the electronic energy level alignment at perovskite-based interfaces is required. This particularly pertains to
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1 Apr 2022 • Journal Article • Journal of Applied Physics
Light-induced trap emptying revealed by intensity-dependent quantum efficiency of organic solar cells
AbstractRevisiting the intensity-dependent quantum efficiency (IDQE) technique in the context of non-fullerene acceptors, we find that at forward-bias conditions, the response exhibits what seems to be anomalous behavior that is not consistent with light excitation induced trap filling. Analysis based on the Shockley–Read–Hall model leads to the conclusion that the contacts
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Feb 2022 • Journal Article • IEEE Transactions on Electron Devices
Self-Aligned Double Injection-Function TFT for Deep Sub-Micrometer Channels’ Length—Application to Solution-Processed Indium Gallium Zinc Oxide
AbstractWe propose and demonstrate self-aligned Double Injection Function Thin Film Transistor (DIF-TFT) architecture that mitigates short channel effects in 200 nm channel on non-scaled insulator (100 nm SiO2). In this conceptual design, a combination of ohmic-like injection contact and a high injection-barrier metal allows maintaining the high ON currents while suppressing
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3 Sep 2021 • Journal Article • ACS Applied Energy Materials
Spatial Distribution of Solar Cell Parameters in Multigrain Halide-Perovskite Films: A Device Model Perspective
AbstractThe polycrystalline nature of perovskite thin films suggests that the nonradiative recombination losses may be grain size dependent. We use measured grain size distributions of methylammonium lead triiodide layers to describe the macroscopic solar cell as composed of multiple single grain size cells operating in parallel. Using a model, we show that the grain size
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