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  1. 21 Jun 2022 Journal Article Applied Physics Letters

    Double injection function InGaZnO transistor—computational analysis of the patterned doping method

    Abstract

    Metal oxide-based electronics is advancing rapidly where the reduced dimensions require transistor structures different to conventional CPUs. The double injection function transistor (DIFT) is a type of a source-controlled transistor. As doping is a facile method in the semiconductor industry, we suggest that the DIFT can be realized through a doping pattern under the

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  2. 10 Jan 2022 Journal Article IEEE Transactions on Electron Devices

    Self-Aligned Double Injection-Function TFT for Deep Sub-Micrometer Channels' Length-Application to Solution-Processed Indium Gallium Zinc Oxide

    Abstract

    We propose and demonstrate self-aligned Double Injection Function Thin Film Transistor (DIF-TFT) architecture that mitigates short channel effects in 200 nm channel on non-scaled insulator (100 nm SiO₂). In this conceptual design, a combination of ohmic-like injection contact and a high injection-barrier metal allows maintaining the high on currents while suppressing

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  3. 6 Jan 2022 Journal Article Advanced Materials

    14 GHz Schottky Diodes using a p-Doped Organic Polymer

    Abstract

    The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography

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  4. Apr 2021 Journal Article Advanced Electronic Materials

    Intra-Island Coulomb Correlations in PEDOT:PSS Thin Films; Saturation of Spin Polarization Magnetoresistance

    Abstract

    Magnetic field and temperature dependence of the magneto-conductance (MC) of thin films made of self-p-doped poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) having room temperature conductivity of ≈200 S cm−1 in the range of fields B = 0–14 T and temperatures T = 1.8–300 K are reported. At B = 0 and for current parallel to the film surface, the

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  5. 14 Feb 2021 Journal Article Journal of Materials Chemistry C

    Electron/hole blocking layers as ionic blocking layers in perovskite solar cells

    Abstract

    Theoretical studies of ion migration have thus far focused on migration within the perovskite layer only. This reflected a “hidden” assumption that the electron/hole blocking layers also function as ion blocking. Following experimental evidence, we study the effect of ion migration into the blocking layers and as a case study we compare our simulations to experimental

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  6. 3 Feb 2021 Journal Article Advanced Functional Materials

    InAs Nanocrystals with Robust p-Type Doping

    Abstract

    Robust control over the carrier type is fundamental for the fabrication of nanocrystal‐based optoelectronic devices, such as the p–n homojunction, but effective incorporation of impurities in semiconductor nanocrystals and its characterization is highly challenging due to their small size. Herein, InAs nanocrystals (NCs), post‐synthetically doped with Cd, serve as a

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  7. 8 Dec 2020 Journal Article ACS Applied Materials & Interfaces

    Effect of the Organic Semiconductor Side Groups on the Structural and Electronic Properties of Their Interface with Dopants

    Abstract

    Two derivatives of [1]benzothieno[3,2-b][1]benzothiophene (BTBT), namely, 2,7-dioctyl-BTBT (C8-BTBT) and 2,7-diphenyl-BTBT (DPh-BTBT), belonging to one of the best performing organic semiconductor (OSC) families, have been employed to investigate the influence of the substitutional side groups on the properties of the interface created when they are in contact with

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  8. 1 Oct 2020 Journal Article Applied Physics Letters

    Electronic-ionic coupling in perovskite based solar cells: Implications for device stability

    Abstract

    Ion migration into blocking layers toward the metallic electrodes is studied within a semiconductor device model framework. We find that ion leakage into the blocking layers and their accumulation at the electrode interface are significantly affected by the electronic injection barrier at the contact. Specifically, we find that if the device structure promotes, under

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  9. 1 Oct 2020 Journal Article Nanoscale Advances

    Surface specificity and mechanistic pathway of de-fluorination of C60F48 on coinage metals

    Abstract

    We provide experimental and theoretical understanding on fundamental processes taking place at room temperature when a fluorinated fullerene dopant gets close to a metal surface. By employing scanning tunneling microscopy and photoelectron spectroscopies, we demonstrate that the on-surface integrity of C60F48 depends on the interaction with the particular metal it

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  10. Oct 2020 Journal Article Advanced Electronic Materials

    Understanding Charge Transport in High-Mobility p-Doped Multicomponent Blend Organic Transistors

    Abstract

    The use of ternary systems comprising polymers, small molecules, and molecular dopants represents a promising approach for the development of high-mobility, solution-processed organic transistors. However, the current understanding of the charge transport in these complex systems, and particularly the role of molecular doping, is rather limited. Here, the role of the

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