-
21 Aug 2023 • Journal Article • Journal of Applied Physics
Switching mechanisms of CMOS-compatible ECRAM transistors—Electrolyte charging and ion plating
AbstractTo elucidate the internal chemical physics of measured CMOS-compatible electrochemical random-access memory (ECRAM) devices, we constructed a 2D semiconductor device simulation, including ions and electrochemical reactions, and used it to fit measured devices. We present the results of a device simulation model that includes Cu+ ions’ diffusion and the charge transfer
… show more -
6 Jul 2023 • Patent • Applied at:
Solar cell device
AbstractA solar cell device is presented. The solar cell device comprises a layered structure comprising an electron transport layer and a hole transport layer and a heterojunction interface region between the electron transport and hole transport layers configured to define at least one charge generation region forming at least one junction between them, wherein at least one
… show more -
14 Jun 2023 • Journal Article • Energy & Environmental Science
Perovskite ionics – elucidating degradation mechanisms in perovskite solar cells via device modelling and iodine chemistry
AbstractWe study recombination pathways in halide perovskite solar cells using a semiconductor device model that includes iodide diffusion and iodide reactions. We stress the device at a bias of 0.9 V, close to the maximum power point, and compare blocking layers impermeable to ions and those that allow ionic transport. For both cases, we examine the impact of incorporating
… show more -
2 Feb 2023 • Journal Article • Advanced Materials
Zn-doped P-type InAs Nanocrystal Quantum Dots
AbstractDoped heavy metal-free III – V semiconductor nanocrystal quantum dots are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p-n homojunction devices. InAs nanocrystals, that are of particular relevance for short wave IR detection and emission
… show more -
20 Sep 2022 • Journal Article • Chemical Physics Reviews
Charge dissociation in organic solar cells—from Onsager and Frenkel to modern models
AbstractOrganic-based solar cells have developed for the last three decades. Moving forward generally requires the assistance of useful models that are adapted to currently used materials and device architectures. The least understood part of the charge generation is the first step of the exciton dissociation, and new or refined models are being suggested. However, many of
… show more -
7 Sep 2022 • Journal Article • ACS Energy Letters
Persistent Ion Accumulation at Interfaces Improves the Performance of Perovskite Solar Cells
AbstractThe mixed ionic–electronic nature of lead halide perovskites makes their performance in solar cells complex in nature. Ion migration is often associated with negative impacts─such as hysteresis or device degradation─leading to significant efforts to suppress ionic movement in perovskite solar cells. In this work, we demonstrate that ion trapping at the perovskite/electron
… show more -
6 Jul 2022 • Journal Article • ACS Applied Materials & Interfaces
Radiofrequency Schottky Diodes Based on p-Doped Copper(I) Thiocyanate (CuSCN)
AbstractSchottky diodes based on inexpensive materials that can be processed using simple manufacturing methods are of particular importance for the next generation of flexible electronics. Although a number of high-frequency n-type diodes and rectifiers have been demonstrated, the progress with p-type diodes is lagging behind, mainly due to the intrinsically low conductivities
… show more -
21 Jun 2022 • Journal Article • Applied Physics Letters
Double injection function InGaZnO transistor—computational analysis of the patterned doping method
AbstractMetal oxide-based electronics is advancing rapidly where the reduced dimensions require transistor structures different to conventional CPUs. The double injection function transistor (DIFT) is a type of a source-controlled transistor. As doping is a facile method in the semiconductor industry, we suggest that the DIFT can be realized through a doping pattern under the
… show more -
2 Jun 2022 • Journal Article • Advanced Materials
14 GHz Schottky Diodes Using a p-Doped Organic Polymer
AbstractThe low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging radio frequency (RF) electronics. Here we overcome these limitations by combining self-aligned asymmetric nanogap electrodes (∼25 nm) produced by adhesion-lithography
… show more -
Jun 2022 • Journal Article • Solar RRL
Illumination-Driven Energy Level Realignment at Buried Interfaces between Organic Charge Transport Layers and a Lead Halide Perovskite
AbstractTremendous progress in employing metal halide perovskites (MHPs) in a variety of applications, especially in photovoltaics, has been made in the past decade. To unlock the full potential of MHP materials in optoelectronic devices, an improved understanding of the electronic energy level alignment at perovskite-based interfaces is required. This particularly pertains to
… show more