The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal to insulator transition (MIT) offers prospects of substantial modulation of the free carriers and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials towards novel Mott transistors requires the realization of their charge gain prospects in a solid-state device. In this study, we present gate-control of electron correlation using a solid-state device utilizing the oxide Mott system $La_{1-x}Sr_xVO_3$ as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework, suggesting at least $\times100$ charge gain originating from the correlated behavior. These preliminary results pave the way towards the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

Four-terminal indirectly heated phase-change switches (IPCSs) have emerged as excellent candidates for radio-frequency integrated circuit (RFIC) applications due to their state-of-the-art cutoff frequency, nonvolatility, CMOS compatibility, and exceptional linearity. However, IPCS performance is limited by relatively low-power handling capabilities in the OFF-state, limited by the Ovonic threshold switching (OTS) phenomenon. In this article, we propose the use of a quad configuration consisting of two series-connected IPCS in parallel with another two series-connected IPCS. This series connection increases the effective threshold voltage, thereby enhancing power handling compared to a single device. We experimentally demonstrate the implementation of this quad configuration in asymmetric and symmetric single-pole double-throw (SPDT) switches. Fabricated using an in-house process, these designs achieve an insertion loss (IL) below 0.8 dB and isolation higher than 17 dB within the dc-15 GHz frequency band. Furthermore, we explore techniques, such as reducing the probing pads and series-shunt configuration, to boost isolation beyond 30 dB. Thanks to the quad configuration, the threshold voltage increases from 5 to 13.5 V, predicatively enabling power handling above 35 dBm.

Shaping and controlling electromagnetic fields at the nanoscale is vital for advancing efficient and compact devices used in optical communications, sensing and metrology, as well as for the exploration of fundamental properties of light-matter interaction and optical nonlinearity. Real-time feedback for active control over light can provide a significant advantage in these endeavors, compensating for ever-changing experimental conditions and inherent or accumulated device flaws. Scanning nearfield microscopy, being slow in essence, cannot provide such a real-time feedback that was thus far possible only by scattering-based microscopy. Here, we present active control over nanophotonic near-fields with direct feedback facilitated by real-time near-field imaging. We use far-field wavefront shaping to control nanophotonic patterns in surface waves, demonstrating translation and splitting of near-field focal spots at nanometer-scale precision, active toggling of different near-field angular momenta and correction of patterns damaged by structural defects using feedback enabled by the real-time operation. The ability to simultaneously shape and observe nanophotonic fields can significantly impact various applications such as nanoscale optical manipulation, optical addressing of integrated quantum emitters and near-field adaptive optics.

Although p-type organic mixed ionic electronic conductors (OMIECs) are susceptible to oxidation, it has not yet been considered as to whether oxygen could behave as an uncontrolled p-dopant. Here, oxygen dissolved in solvents is shown to be behave as a p-dopant, that fills traps to enable more effective electrochemical doping in OMIECs and organic electrochemical transistors (OECTs). Yet the presence of oxygen is also known to jeopardize OECT stability. A two-step strategy is introduced to solve this contradictory problem, where first the solvent is degassed, and second the OMIEC is doped in a controlled manner using a chemical dopant. This strategy increases on-off ratio, tunes the threshold voltage, and enhances the transconductance, mobility and the µC* product, while having a remarkable impact on both p-type and n-type OECT stability. This simple solution-processing technique is easily implemented, low-cost, and highly effective in an oxygen-rich environment. The data herein suggests that combining chemical doping with solvent degassing could be a broadly applicable technique to improve essential criteria needed to realize organic bioelectronics and more complex OMIEC circuitry

Piezoelectric ultrasound transducers are constrained by size, bandwidth, and angular response, limiting their ability to fully characterize the acoustic properties of objects. In this study, we introduce a novel modular all-optical platform for ultrasound generation and detection to overcome these limitations, demonstrating wideband operation (>50 MHz), omnidirectional response, and high signal fidelity. Ultrasound generation is performed via the optoacoustic effect by illuminating an optically absorbing coating with spatially modulated pulsed light, and ultrasound detection is carried out using a silicon-photonic acoustic detector. By illuminating patterns that span a basis and scanning the detector, the full transmission matrix is measured, consisting of the acoustic waveforms for all the transmitter–receiver pairs in the measurement geometry. Our method is experimentally demonstrated in transmission mode for beam steering, beam focusing, and imaging, achieving excellent agreement with the theory.

The Bernards–Malliaras model, published in 2007, is the primary reference for the operation of organic electrochemical transistors (OECTs). It assumes that, as in most transistors, the electronic transport is drift only. However, in other electrochemical devices, such as batteries, the charge neutrality is accompanied by diffusion-only transport. Using detailed 2D device simulations of the entire structure while accounting for ionic and electronic conduction, we show that high ion density (>10¹⁹ cm⁻³) results in Debye screening of the drain–source bias at the electrodes’ interface. Hence, unlike the drift-only current in standard FETs or low ion density OECTs, the current in high ion density OECTs is diffusion only. Also, we show that since in OECTs, the volumetric capacitor and the semiconductor are one, the threshold voltage has a different meaning than that in FETs, where the semiconductor and the gate-oxide capacitor are distinct entities. We use the above insights to derive a new model useful to experimentalists. Lastly, we fabricated PEDOT:PSS fiber-OECTs and used the results to verify the model.

Correlated oxides are known to have remarkable properties, with a range of electronic, magnetic, optoelectronic, and photonic functionalities. A key ingredient in realizing these properties into practical technology is the effective and scalable integration of oxides with conventional semiconductors. Unlocking the full spectrum of functionality requires atomically abrupt oxide–semiconductor interfaces and intimate knowledge of their potential landscape and charge transport. In this study, we investigated the electrical properties of epitaxial SrTiO₃/GaAs heterostructures by examining the band alignment and transport behavior at the interface. We employ X-ray photoelectron spectroscopy (XPS) to measure the barriers for electrons and holes across the interface and, through them, explain the transport behavior for junctions with n- and p-type GaAs. We further show qualitative evidence of the strong photoresponse of these structures, illustrating the potential of these structures in optoelectronic devices. These results establish the fundamental groundwork for utilizing these interfaces toward new devices and define their design space.

Despite great advances in the fabrication methods of metal nanoparticles with various sizes and shapes, the available tools for manipulating their microstructure and morphology still remain limited. In the present work we introduce the age-old metallurgical technique of recrystallization to the synthesis of metallic nanoparticles. We uniaxially compressed a large number of single crystalline and defect free Pt nanoparticles obtained by solid-state dewetting and annealed them at the temperature of 1000 °C. Our findings reveal that, while the as-dewetted particles exhibited similar shapes and crystallographic orientations, the plastic deformation and annealing led to a diverse range of shapes, microstructures, and orientations among the particles. We categorized the particles into four distinct types based on their appearance: slanted, terraced, “Danish pastry”, and broken particles. Finally, we propose a differentiation mechanism responsible for this diversification, which relies on a combination of recrystallization, surface step formation, and solid-state dewetting processes.

Indium oxide and doped indium oxide films were successfully grown utilizing a plasma-enhanced atomic layer deposition supercycling process, which was found to be an effective means of controlling films’ composition and, hence, their properties. Using trimethylindium and oxygen plasma as an indium precursor and a co-reactant, respectively, a growth rate of approximately 1.26 Å per cycle was obtained based on thickness measurements by spectroscopic ellipsometry. Three distinct dopants, Sn, Ti, and Mo, have been incorporated into indium oxide. The effects of dopant type, cycle ratio of dopant to indium oxide, and thermal annealing on the structural, electrical, and optical properties were studied. The deposited films consisted of polycrystalline columnar grains perpendicular to the substrate with a cubic bixbyite structure and [111] as the favored growth direction. Thermal annealing had a significant effect on the film characteristics, resulting in an order of magnitude reduction in resistivity, as well as changes in transmittance in the near-infrared (NIR) and ultraviolet (UV) regions. The lowest resistivities achieved for Sn-doped, Ti-doped, and Mo-doped were 2.8 × 10⁻⁴, 4.2 × 10⁻⁴, and 6.1 × 10⁻⁴ Ω cm, respectively. The changes are attributed to dopant activation, as the UV shift between the differently doped samples may be linked to the Moss–Burstein effect and the NIR behavior can be explained by an increase in charge carrier density, as predicted by the Drude model. The three dopants primarily provide a trade-off between electrical resistance and NIR transparency. Mo-doped films exhibited the highest near-infrared transparency, while Sn-doped films offered the lowest sheet resistance.

For the successful implementation of organic electrochemical transistors in neuromorphic computing, bioelectronics, and real-time sensing applications it is essential to understand the factors that influence device switching times. Here we describe a physical-electrochemical model of the transient response to a step of the gate voltage. The model incorporates (1) ion diffusion inside the channel that governs the electronic conductivity, (2) horizontal electron transport, and (3) the external elements (capacitance, ionic resistance) of the ion dynamics in the electrolyte. We find a general expression of two different time constants that determine the vertical insertion process in terms of the kinetic parameters, in addition to the electronic transit time. We thus obtain a generalization of Bernards-Malliaras model for the exponential transient, as well as a more general set of nonlinear equations that explain the large perturbation effects. The basic model is confirmed by detailed simulations that enable to visualize the different ions distributions and dynamics.